The CPH6414 is an N-channel silicon MOSFET designed for general-purpose switching applications. It is housed in a CPH6 package with dimensions of 6.0 mm × 2.0 mm. The device features a 30 V drain-to-source voltage rating, a continuous drain current of 5 A, and a pulsed drain current of 20 A. It has a low ON-resistance of 63 to 88 mΩ at 4 V gate drive and 37 to 48 mΩ at 10 V gate drive. Power dissipation is rated at 1.6 W when mounted on a ceramic board (1200 mm² × 0.8 mm). The part is qualified for operation across a junction temperature range of -55 °C to 150 °C. Total gate charge is 8.5 nC at 10 V gate drive and 5 A drain current. Switching times include a turn-on delay of 11 ns and a fall time of 18 ns. The device meets RoHS standards.
General-Purpose Switching Device Applications N-Channel Silicon MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CPH6414-TL-E |
| Polarity | N-Channel |