P-Channel Silicon MOSFET for general-purpose switching, available in a CPH6 package measuring 6.0mm x 8.2mm x 2.0mm. Features a drain-to-source voltage rating of -20 V, continuous drain current of -5 A, and peak pulse current of -20 A. Static drain-to-source on-resistance is 46 mΩ at VGS = -2.5V and 32 mΩ at VGS = -4.5V. Total gate charge is 31 nC with a 2.5V gate drive capability. Maximum channel temperature is 150°C, and storage temperature range is -55°C to +150°C. Power dissipation is 2.0 W on FR4 board with pulse width ≤ 5s. Input capacitance is 1230 pF, output capacitance is 200 pF, and reverse transfer capacitance is 170 pF at VDS = -10V.
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CPH6311-TL-E |
| Polarity | P-Channel |