N-Channel Silicon MOSFET for general-purpose switching, packaged in a SSFP case with dimensions of 8.0 mm × 7.0 mm × 1.4 mm. Rated for a drain-to-source voltage of 60 V, continuous drain current of 200 mA, and power dissipation of 0.15 W when mounted on a glass epoxy substrate. Features 4 V drive capability, halogen-free compliance, and a channel temperature rating of 150°C. Meets RoHS standards. Switching times include a turn-on delay of 13.5 ns, rise time of 11.5 ns, turn-off delay of 81 ns, and fall time of 39 ns. Total gate charge is 1.88 nC at VDS=30 V and VGS=10 V.
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 6HN04SS-TL-H |
| Polarity | N-Channel |