Panasonic 6HN04SS-TL-H

Description
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Description
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching, packaged in a SSFP case with dimensions of 8.0 mm × 7.0 mm × 1.4 mm. Rated for a drain-to-source voltage of 60 V, continuous drain current of 200 mA, and power dissipation of 0.15 W when mounted on a glass epoxy substrate. Features 4 V drive capability, halogen-free compliance, and a channel temperature rating of 150°C. Meets RoHS standards. Switching times include a turn-on delay of 13.5 ns, rise time of 11.5 ns, turn-off delay of 81 ns, and fall time of 39 ns. Total gate charge is 1.88 nC at VDS=30 V and VGS=10 V.

Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching, packaged in a SSFP case with dimensions of 8.0 mm × 7.0 mm × 1.4 mm. Rated for a drain-to-source voltage of 60 V, continuous drain current of 200 mA, and power dissipation of 0.15 W when mounted on a glass epoxy substrate. Features 4 V drive capability, halogen-free compliance, and a channel temperature rating of 150°C. Meets RoHS standards. Switching times include a turn-on delay of 13.5 ns, rise time of 11.5 ns, turn-off delay of 81 ns, and fall time of 39 ns. Total gate charge is 1.88 nC at VDS=30 V and VGS=10 V.

Suppliers

Company
Product
Description
Supplier Links
 - 6HN04SS-TL-H - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 6HN04SS-TL-H
Polarity N-Channel
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