P-Channel silicon MOSFET designed for general-purpose switching applications with a drain-to-source voltage rating of 50 V, continuous drain current of 70 mA, and power dissipation of 0.25 W. Features low ON-resistance of 22 Ω max at VGS = -10 V and 32 Ω max at VGS = -4 V, with 4 V drive capability and high-speed switching. Package is CP with dimensions of 5.0 mm × 5.0 mm, and includes marking 'XC'. Channel temperature rating is 150 °C. Total gate charge is 1.32 nC, with turn-on delay of 13 ns and fall time of 150 ns.
P-Channel Silicon MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 5HP01CTB-E |
| Polarity | P-Channel |