Panasonic 5HP01CTB-E

Description
P-Channel Silicon MOSFET
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Description
P-Channel Silicon MOSFET
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Datasheet
Datasheet Summary
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P-Channel silicon MOSFET designed for general-purpose switching applications with a drain-to-source voltage rating of 50 V, continuous drain current of 70 mA, and power dissipation of 0.25 W. Features low ON-resistance of 22 Ω max at VGS = -10 V and 32 Ω max at VGS = -4 V, with 4 V drive capability and high-speed switching. Package is CP with dimensions of 5.0 mm × 5.0 mm, and includes marking 'XC'. Channel temperature rating is 150 °C. Total gate charge is 1.32 nC, with turn-on delay of 13 ns and fall time of 150 ns.

Datasheet Summary
Powered by GS/AI

P-Channel silicon MOSFET designed for general-purpose switching applications with a drain-to-source voltage rating of 50 V, continuous drain current of 70 mA, and power dissipation of 0.25 W. Features low ON-resistance of 22 Ω max at VGS = -10 V and 32 Ω max at VGS = -4 V, with 4 V drive capability and high-speed switching. Package is CP with dimensions of 5.0 mm × 5.0 mm, and includes marking 'XC'. Channel temperature rating is 150 °C. Total gate charge is 1.32 nC, with turn-on delay of 13 ns and fall time of 150 ns.

Suppliers

Company
Product
Description
Supplier Links
 - 5HP01CTB-E - Rochester Electronics
Newburyport, MA, United States
P-Channel Silicon MOSFET

P-Channel Silicon MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 5HP01CTB-E
Polarity P-Channel
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