Panasonic 5HN02N

N-Channel Silicon MOSFET designed for ultrahigh-speed switching applications, housed in a 3-pin surface-mount package with dimensions of 5.0 mm × 4.0 mm × 0.5 mm. It has a drain-to-source voltage rating of 50 V, continuous drain current of 0.2 A, and maximum power dissipation of 0.4 W. The device operates with a 4 V gate drive, featuring an ON-resistance of 2.3 to 3.2 Ω at VGS = 4 V and ID = 50 mA. Switching times include a rise time of 12 ns and fall time of 110 ns. It meets absolute maximum ratings for channel temperature of 150 °C and storage temperature range of -55 to +150 °C. The part is unsuitable for life-support or high-reliability critical systems.