N-channel silicon MOSFET for general-purpose switching, packaged in an MCP case with dimensions 2.0 mm × 1.2 mm × 0.65 mm, rated for 50 V drain-to-source voltage, 0.1 A continuous drain current, and 0.15 W power dissipation, with a gate threshold voltage of 1 to 2.4 V and on-resistance of 7.5 to 10.5 Ω at 4 V gate drive. The device meets JEITA/JEDEC SC-70 (SOT-323) package standards and is supplied in 3,000-piece reels for 5HN01M-TL-E, with Pb-free finish.
Small Signal Field-Effect Transistor
| Rochester Electronics | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | 5HN01M-TL-E |
| Package Type | SOT323; SC-70 (SOT-323) |
