The 2SK536-TB-E is an N-channel MOSFET in a CP package (SC-59, TO-236, SOT-23) with dimensions of 3.0 mm × 2.9 mm × 1.1 mm, designed for small signal switching applications. It has a drain-to-source voltage rating of 50 V, a continuous drain current of 100 mA, and a maximum power dissipation of 200 mW. The device features a low ON-state resistance of 20 Ω at VGS=10 V and ID=10 mA, with a forward transfer admittance of 25 to 40 mS. It meets RoHS compliance and is supplied in tape and reel packaging. The part is an enhancement-type MOSFET with a cutoff voltage range of 0.3 to 1.5 V and operates within a storage temperature range of -55°C to +125°C.
Small Signal Field-Effect Transistor
| Rochester Electronics | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | 2SK536-TB-E |
| Package Type | SC-59-3 |
