Panasonic 2SK4210

N-Channel Silicon MOSFET for general-purpose switching applications in a TO-3PB package measuring 15.6 mm × 4.8 mm. It has a drain-to-source voltage rating of 900 V, a continuous drain current of 10 A, and a pulsed drain current of 20 A. The device features a maximum on-state resistance of 1.3 Ω at VGS=10 V and ID=5 A, and guarantees avalanche energy of 560 mJ at IAV=10 A. It meets the HVP process reliability standard and operates with a channel temperature up to 150 °C. Its switching times are specified with a turn-on delay of 27 ns, rise time of 80 ns, turn-off delay of 250 ns, and fall time of 80 ns. Total gate charge is 75 nC at VDS=200 V and VGS=10 V. The part is not qualified for medical, aerospace, or life-safety applications.