N-Channel Silicon MOSFET for general-purpose switching applications in a TO-220FI(LS) package. It has a drain-to-source voltage rating of 600 V, continuous drain current of 4 A at 25°C case temperature, and on-resistance of 1.8 Ω at 10 V gate drive. The device features repetitive avalanche capability with 3 mJ energy per pulse and is guaranteed for operation up to a channel temperature of 150°C. Input capacitance is 360 pF at 30 V. The product meets RoHS standards and is rated for storage temperatures from -55°C to +150°C.
N-Channel Silicon MOSFET For General Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4198LS |
| Polarity | N-Channel |