N-Channel Silicon MOSFET for general-purpose switching, packaged in a TO-3PB case with dimensions of 15.6 mm × 4.8 mm × 14.0 mm. It has a drain-to-source voltage rating of 500 V, continuous drain current of 20 A, and pulsed drain current of 60 A. The device features an ON-resistance of 0.33 to 0.43 Ω at 8 A and 10 V gate-source voltage, input capacitance of 1200 pF, and avalanche energy rating of 124 mJ. The channel temperature is rated to 150 °C, and storage temperature ranges from -55 °C to +150 °C. The part meets SANYO's high reliability HVP process and has avalanche resistance guarantee.
N-Channel Silicon MOSFET General-Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4124 |
| Polarity | N-Channel |