Panasonic 2SK4124

Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
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Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
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Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching, packaged in a TO-3PB case with dimensions of 15.6 mm × 4.8 mm × 14.0 mm. It has a drain-to-source voltage rating of 500 V, continuous drain current of 20 A, and pulsed drain current of 60 A. The device features an ON-resistance of 0.33 to 0.43 Ω at 8 A and 10 V gate-source voltage, input capacitance of 1200 pF, and avalanche energy rating of 124 mJ. The channel temperature is rated to 150 °C, and storage temperature ranges from -55 °C to +150 °C. The part meets SANYO's high reliability HVP process and has avalanche resistance guarantee.

Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching, packaged in a TO-3PB case with dimensions of 15.6 mm × 4.8 mm × 14.0 mm. It has a drain-to-source voltage rating of 500 V, continuous drain current of 20 A, and pulsed drain current of 60 A. The device features an ON-resistance of 0.33 to 0.43 Ω at 8 A and 10 V gate-source voltage, input capacitance of 1200 pF, and avalanche energy rating of 124 mJ. The channel temperature is rated to 150 °C, and storage temperature ranges from -55 °C to +150 °C. The part meets SANYO's high reliability HVP process and has avalanche resistance guarantee.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK4124 - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET General-Purpose Switching Device Application

N-Channel Silicon MOSFET General-Purpose Switching Device Application

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4124
Polarity N-Channel
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