N-Channel Silicon MOSFET for general-purpose switching, housed in a TO-220FI(LS) package with dimensions of 10.0 mm length, 4.5 mm width, and 2.8 mm thickness. It has a drain-to-source voltage rating of 650 V, continuous drain current of 8.5 A at Tc=25°C, and pulse drain current of 48 A. The device features low ON-resistance (0.55 to 0.72 Ω at ID=6A, VGS=10V), low input capacitance (1200 pF), and guaranteed avalanche energy of 84 mJ. It operates with a channel temperature up to 150°C and meets the HVP process for high reliability. The part is rated for storage temperatures from -55°C to +150°C and has ±30 V gate-to-source voltage tolerance.
N-Channel Silicon MOSFET General-Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4089LS |
| Polarity | N-Channel |