Panasonic 2SK4089LS

Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
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Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
Request a Quote
Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching, housed in a TO-220FI(LS) package with dimensions of 10.0 mm length, 4.5 mm width, and 2.8 mm thickness. It has a drain-to-source voltage rating of 650 V, continuous drain current of 8.5 A at Tc=25°C, and pulse drain current of 48 A. The device features low ON-resistance (0.55 to 0.72 Ω at ID=6A, VGS=10V), low input capacitance (1200 pF), and guaranteed avalanche energy of 84 mJ. It operates with a channel temperature up to 150°C and meets the HVP process for high reliability. The part is rated for storage temperatures from -55°C to +150°C and has ±30 V gate-to-source voltage tolerance.

Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching, housed in a TO-220FI(LS) package with dimensions of 10.0 mm length, 4.5 mm width, and 2.8 mm thickness. It has a drain-to-source voltage rating of 650 V, continuous drain current of 8.5 A at Tc=25°C, and pulse drain current of 48 A. The device features low ON-resistance (0.55 to 0.72 Ω at ID=6A, VGS=10V), low input capacitance (1200 pF), and guaranteed avalanche energy of 84 mJ. It operates with a channel temperature up to 150°C and meets the HVP process for high reliability. The part is rated for storage temperatures from -55°C to +150°C and has ±30 V gate-to-source voltage tolerance.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK4089LS - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET General-Purpose Switching Device Application

N-Channel Silicon MOSFET General-Purpose Switching Device Application

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4089LS
Polarity N-Channel
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