N-Channel silicon MOSFET for general-purpose switching, housed in a TO-220FI(LS) package with dimensions of 10.0 mm length, 4.5 mm width, and 15.0 mm height. It has a drain-to-source voltage rating of 600 V, a continuous drain current of 7.9 A at Tc=25°C, and a pulsed drain current of 43 A. The static drain-to-source on-state resistance is 0.58 to 0.75 Ω at ID=6A and VGS=10V. The device features avalanche resistance with a single-pulse energy rating of 79 mJ and is rated for a channel temperature of 150°C. It complies with SANYO's HVP process for high reliability and is designed for mica-less mounting with good attachment workability.
11.5A, 600V, 0.75ohm, N-Channel MOSFET, TO-220AB
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4086LS |
| Polarity | N-Channel |