Panasonic 2SK4086LS-MG5

Description
N-Channel Silicon MOSFET For General Purpose Switching Device Application
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Description
N-Channel Silicon MOSFET For General Purpose Switching Device Application
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Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching applications, packaged in a TO-220FI(LS) case. It has a drain-to-source voltage rating of 600 V, continuous drain current of 7.9 A at Tc=25°C, and pulsed drain current of 43 A. The device features low ON-resistance (max 0.75 Ω at ID=6A, VGS=10V), low input capacitance (1000 pF), and avalanche energy rating of 79 mJ. It meets the absolute maximum ratings for gate-to-source voltage of ±30 V and channel temperature of 150°C. Avalanche current is guaranteed at 11.5 A. The part is designed for high reliability with HVP process and mica-less package.

Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching applications, packaged in a TO-220FI(LS) case. It has a drain-to-source voltage rating of 600 V, continuous drain current of 7.9 A at Tc=25°C, and pulsed drain current of 43 A. The device features low ON-resistance (max 0.75 Ω at ID=6A, VGS=10V), low input capacitance (1000 pF), and avalanche energy rating of 79 mJ. It meets the absolute maximum ratings for gate-to-source voltage of ±30 V and channel temperature of 150°C. Avalanche current is guaranteed at 11.5 A. The part is designed for high reliability with HVP process and mica-less package.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK4086LS-MG5 - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET For General Purpose Switching Device Application

N-Channel Silicon MOSFET For General Purpose Switching Device Application

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4086LS-MG5
Polarity N-Channel
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