N-Channel Silicon MOSFET for general-purpose switching applications, packaged in a TO-220FI(LS) case. It has a drain-to-source voltage rating of 600 V, continuous drain current of 7.9 A at Tc=25°C, and pulsed drain current of 43 A. The device features low ON-resistance (max 0.75 Ω at ID=6A, VGS=10V), low input capacitance (1000 pF), and avalanche energy rating of 79 mJ. It meets the absolute maximum ratings for gate-to-source voltage of ±30 V and channel temperature of 150°C. Avalanche current is guaranteed at 11.5 A. The part is designed for high reliability with HVP process and mica-less package.
N-Channel Silicon MOSFET For General Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4086LS-MG5 |
| Polarity | N-Channel |