Panasonic 2SK4085LS-CBC11

Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
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Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
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Datasheet
Datasheet Summary
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N-Channel Power MOSFET designed for general-purpose switching applications, housed in a TO-220F-3FS package measuring 10.16 mm by 89.21 mm with a pin spacing of 2.54 mm. It has a drain-to-source voltage rating of 500 V, a continuous drain current of 11 A at Tc=25°C, and a pulsed drain current of 60 A. The static drain-to-source on-state resistance is 0.33 Ω (typical) at VGS=10 V and ID=8 A. The device features an input capacitance of 1200 pF (typical), a total gate charge of 46.6 nC, and can handle a single-pulse avalanche energy of 141 mJ. The channel temperature is rated up to 150 °C, with a storage temperature range from -55 °C to +150 °C.

Datasheet Summary
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N-Channel Power MOSFET designed for general-purpose switching applications, housed in a TO-220F-3FS package measuring 10.16 mm by 89.21 mm with a pin spacing of 2.54 mm. It has a drain-to-source voltage rating of 500 V, a continuous drain current of 11 A at Tc=25°C, and a pulsed drain current of 60 A. The static drain-to-source on-state resistance is 0.33 Ω (typical) at VGS=10 V and ID=8 A. The device features an input capacitance of 1200 pF (typical), a total gate charge of 46.6 nC, and can handle a single-pulse avalanche energy of 141 mJ. The channel temperature is rated up to 150 °C, with a storage temperature range from -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK4085LS-CBC11 - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET General-Purpose Switching Device Application

N-Channel Silicon MOSFET General-Purpose Switching Device Application

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4085LS-CBC11
Polarity N-Channel
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