N-Channel Power MOSFET designed for general-purpose switching applications, housed in a TO-220F-3FS package measuring 10.16 mm by 89.21 mm with a pin spacing of 2.54 mm. It has a drain-to-source voltage rating of 500 V, a continuous drain current of 11 A at Tc=25°C, and a pulsed drain current of 60 A. The static drain-to-source on-state resistance is 0.33 Ω (typical) at VGS=10 V and ID=8 A. The device features an input capacitance of 1200 pF (typical), a total gate charge of 46.6 nC, and can handle a single-pulse avalanche energy of 141 mJ. The channel temperature is rated up to 150 °C, with a storage temperature range from -55 °C to +150 °C.
N-Channel Silicon MOSFET General-Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4085LS-CBC11 |
| Polarity | N-Channel |