N-Channel Power MOSFET designed for general-purpose switching applications, housed in a TO-220F-3FS package with dimensions of 10.16 mm width, 89.21 mm length, and 3.18 mm height. It has a drain-to-source voltage rating of 500 V, continuous drain current of 11 A at Tc=25°C, and pulsed drain current of 60 A. The static drain-to-source on-state resistance is 0.33 Ω (typical) at VGS=10 V and ID=8 A. The device features an avalanche energy rating of 141 mJ and a channel temperature limit of 150°C. It meets RoHS standards and is compatible with 10 V gate drive. The part is qualified under JEITA/JEDEC SC-67 package standard.
N-Channel Silicon MOSFET General-Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4085LS-CB11 |
| Polarity | N-Channel |