Panasonic 2SK4085LS-CB11

Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
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Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
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Datasheet
Datasheet Summary
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N-Channel Power MOSFET designed for general-purpose switching applications, housed in a TO-220F-3FS package with dimensions of 10.16 mm width, 89.21 mm length, and 3.18 mm height. It has a drain-to-source voltage rating of 500 V, continuous drain current of 11 A at Tc=25°C, and pulsed drain current of 60 A. The static drain-to-source on-state resistance is 0.33 Ω (typical) at VGS=10 V and ID=8 A. The device features an avalanche energy rating of 141 mJ and a channel temperature limit of 150°C. It meets RoHS standards and is compatible with 10 V gate drive. The part is qualified under JEITA/JEDEC SC-67 package standard.

Datasheet Summary
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N-Channel Power MOSFET designed for general-purpose switching applications, housed in a TO-220F-3FS package with dimensions of 10.16 mm width, 89.21 mm length, and 3.18 mm height. It has a drain-to-source voltage rating of 500 V, continuous drain current of 11 A at Tc=25°C, and pulsed drain current of 60 A. The static drain-to-source on-state resistance is 0.33 Ω (typical) at VGS=10 V and ID=8 A. The device features an avalanche energy rating of 141 mJ and a channel temperature limit of 150°C. It meets RoHS standards and is compatible with 10 V gate drive. The part is qualified under JEITA/JEDEC SC-67 package standard.

Suppliers

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Product
Description
Supplier Links
 - 2SK4085LS-CB11 - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET General-Purpose Switching Device Application

N-Channel Silicon MOSFET General-Purpose Switching Device Application

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4085LS-CB11
Polarity N-Channel
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