N-channel silicon MOSFET for general-purpose switching, in a TO-220FI(LS) package. It has a drain-to-source voltage rating of 500 V, a DC drain current of 9.6 A at Tc=25°C, and a static drain-to-source on-state resistance of 0.4 to 0.52 Ω at ID=7 A and VGS=10 V. The device features avalanche resistance with a single-pulse energy rating of 122 mJ and meets the HVP process for high reliability. It is designed for use in standard electronic applications and is not intended for life-sustaining or safety-critical systems.
MOSFET, T14A, 500V, 0.52ohm, N-Channel
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4084LS |
| Polarity | N-Channel |