N-Channel Silicon MOSFET for general-purpose switching applications, housed in an SMP-FD package measuring 10.2 mm × 7.2 mm, with a drain-to-source voltage rating of 60 V, a continuous drain current of 100 A, and an avalanche energy rating of 850 mJ. The device features low ON-resistance (4.7 mΩ max at VGS=10 V, ID=50 A) and guaranteed avalanche resistance. Total gate charge is 220 nC at VGS=10 V and ID=100 A.
N-Channel Silicon MOSFET For General Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4066-DL-E |
| Polarity | N-Channel |