Panasonic 2SK4066-DL-E

Description
N-Channel Silicon MOSFET For General Purpose Switching Device Applications
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Description
N-Channel Silicon MOSFET For General Purpose Switching Device Applications
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Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching applications, housed in an SMP-FD package measuring 10.2 mm × 7.2 mm, with a drain-to-source voltage rating of 60 V, a continuous drain current of 100 A, and an avalanche energy rating of 850 mJ. The device features low ON-resistance (4.7 mΩ max at VGS=10 V, ID=50 A) and guaranteed avalanche resistance. Total gate charge is 220 nC at VGS=10 V and ID=100 A.

Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching applications, housed in an SMP-FD package measuring 10.2 mm × 7.2 mm, with a drain-to-source voltage rating of 60 V, a continuous drain current of 100 A, and an avalanche energy rating of 850 mJ. The device features low ON-resistance (4.7 mΩ max at VGS=10 V, ID=50 A) and guaranteed avalanche resistance. Total gate charge is 220 nC at VGS=10 V and ID=100 A.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK4066-DL-E - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET For General Purpose Switching Device Applications

N-Channel Silicon MOSFET For General Purpose Switching Device Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4066-DL-E
Polarity N-Channel
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