N-Channel Silicon MOSFET for general-purpose switching, housed in a TO-220ML package with dimensions of 20.63 mm × 1.6 mm × 1.2 mm, featuring a 60 V drain-to-source voltage, 45 A continuous drain current, and low on-state resistance of 10.5 to 21 mΩ depending on gate drive voltage. It supports 4 V gate drive, ultrahigh-speed switching with a total gate charge of 67 nC, and meets a single-pulse avalanche energy rating of 303 mJ. The device is rated for a maximum channel temperature of 150 °C and operates within a storage temperature range of -55 °C to +150 °C.
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK3704 |
| Polarity | N-Channel |