Panasonic 2SK3618-TL-E

N-Channel Silicon MOSFET for general-purpose switching applications with a drain-to-source voltage rating of 100 V, continuous drain current of 8 A, and pulsed drain current of 32 A. The device features low ON-resistance of 100 to 180 mΩ depending on gate voltage, ultrahigh-speed switching with turn-on delay of 11.5 ns and fall time of 42 ns, and is designed for 4 V gate drive. It is packaged in a TP-FA package with dimensions of 6.5 mm × 5.1 mm × 2.3 mm, and operates within a junction temperature range of -55 °C to 150 °C.