N-Channel Silicon MOSFET designed for general-purpose switching, available in a TP-FA package measuring 6.5 mm × 2.3 mm. It has a drain-to-source voltage rating of 100 V, continuous drain current of 8 A, and pulsed drain current of 32 A. The device features low ON-resistance with RDS(on) as low as 100 mΩ at VGS=10 V and 130 mΩ at VGS=4 V, and supports 4 V drive operation. Switching times include a rise time of 14 ns and fall time of 42 ns. The transistor meets the IEC 60286-3 standard for package dimensions and is rated for operation from -55 °C to 150 °C. It is not intended for safety-critical applications requiring high reliability.
N-Channel Silicon MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK3618-E |
| Polarity | N-Channel |