Panasonic 2SK3615-TL-E

Description
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
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Description
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
Request a Quote
Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching applications in a SANYO TP-FA package measuring 6.5 mm × 5.1 mm × 2.3 mm. It has a drain-to-source voltage rating of 60 V, continuous drain current of 12 A, and drain-to-source on-state resistance of 45 to 85 mΩ at 4 V to 10 V gate drive. The device supports ultrahigh-speed switching with turn-on delay of 10 ns and fall time of 60 ns. It complies with RoHS standards and has a channel temperature rating of 150 °C.

Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching applications in a SANYO TP-FA package measuring 6.5 mm × 5.1 mm × 2.3 mm. It has a drain-to-source voltage rating of 60 V, continuous drain current of 12 A, and drain-to-source on-state resistance of 45 to 85 mΩ at 4 V to 10 V gate drive. The device supports ultrahigh-speed switching with turn-on delay of 10 ns and fall time of 60 ns. It complies with RoHS standards and has a channel temperature rating of 150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK3615-TL-E - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications

N-Channel Silicon MOSFET For General-Purpose Switching Device Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK3615-TL-E
Polarity N-Channel
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