N-Channel Silicon MOSFET for general-purpose switching applications in a SANYO TP-FA package measuring 6.5 mm × 5.1 mm × 2.3 mm. It has a drain-to-source voltage rating of 60 V, continuous drain current of 12 A, and drain-to-source on-state resistance of 45 to 85 mΩ at 4 V to 10 V gate drive. The device supports ultrahigh-speed switching with turn-on delay of 10 ns and fall time of 60 ns. It complies with RoHS standards and has a channel temperature rating of 150 °C.
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK3615-TL-E |
| Polarity | N-Channel |