N-Channel silicon MOSFET for DC/DC converter and motor driver applications, packaged in a TO-220FI(LS) case with dimensions as specified. It has a drain-to-source voltage rating of 60 V, a continuous drain current of 40 A, and a pulsed drain current of 160 A. The static drain-to-source on-state resistance is 17 mΩ at VGS=4V and 20 A, or 13 mΩ at VGS=10V and 20 A. It supports 4 V gate drive and has a maximum channel temperature of 150 °C. The device meets the AEC-Q200 automotive qualification standard.
MOSFET 40A, 60V, 0.024ohm, N-Channel
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK3415LS |
| Polarity | N-Channel |