Panasonic TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK327700L 2SK327700L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004724-2SK327700L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 10W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: U-G1 Dimension: U-G1 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 170pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 1.25A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004724-2SK327700L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 10W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: U-G1 Dimension: U-G1 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 170pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 1.25A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK327700L - 1004724-2SK327700L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK327700L
1004724-2SK327700L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK327700L 1004724-2SK327700L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004724-2SK327700L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 10W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: U-G1 Dimension: U-G1 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 170pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 1.25A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1004724-2SK327700L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta), 10W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: U-G1
Dimension: U-G1
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 170pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 1.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK327700L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK327700L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK327700L
MOSFET N-CH 200V 2.5A U-G1

MOSFET N-CH 200V 2.5A U-G1

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1004724-2SK327700L 2SK327700L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK327700L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 1000 to 10000 milliwatts
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