Panasonic 2SJ670-TD-E

2SJ670 is a P-channel silicon MOSFET designed for general-purpose switching applications. It is housed in a PCP package with dimensions of 5.2 mm in length, 1.6 mm in width, and 3.0 mm in height. The device has a drain-to-source voltage rating of 100 V, a continuous drain current of 1.5 A, and a pulsed drain current of 6 A. It operates with a 4 V gate drive and features low ON-resistance of 410 to 745 mΩ depending on gate voltage. The switching speeds include a turn-on delay of 9 ns, rise time of 4.5 ns, turn-off delay of 62 ns, and fall time of 34 ns. Total gate charge is 11 nC. The storage temperature range is from -55 °C to +150 °C. The device meets AEC-Q200 qualification standards.