Panasonic 2SJ646-TL-E

P-Channel Silicon MOSFET for general-purpose switching applications in a TO-252 package, measuring 6.5 mm × 5.1 mm. It features low ON-resistance with RDS(on) up to 154 mΩ at VGS = -4 V and ID = -2 A, and supports ultrahigh-speed switching with a total gate charge of 11 nC. The device has a drain-to-source voltage rating of -30 V, continuous drain current of -8 A, and is rated for channel temperatures up to 150°C. It operates with 4V gate drive and meets RoHS compliance.