Panasonic 2SJ635-E

P-Channel Silicon MOSFET for general-purpose switching applications in DC/DC converters, featuring a maximum drain-to-source voltage of 60 V, continuous drain current of 12 A, and low RDS(on) of 60 mΩ at VGS = -10 V. The device operates with a 4 V drive voltage, has a total gate charge of 45 nC, and is housed in a TO-220 package measuring 6.5 mm × 5.0 mm × 2.3 mm. It meets AEC-Q200 and RoHS standards.