Panasonic 2SJ630-TD-E

P-Channel Silicon MOSFET for general-purpose switching with 1.8V drive capability, ultrahigh-speed switching, and low ON-resistance. Package is a 3-pin SANYO PCP with dimensions of 4.5 mm × 1.6 mm × 1.5 mm. Maximum drain-to-source voltage is -12 V, continuous drain current is -6 A, and pulse current is -24 A. Power dissipation is 3.5 W at Tc=25°C and 1.5 W when mounted on a ceramic board (600 mm² × 0.8 mm). RDS(on) is 45 mΩ at -3 A and -4.5 V gate drive. Meets AEC-Q200 and RoHS standards.