Panasonic TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ053600L 2SJ053600L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 102013-2SJ053600L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SMini3-G1 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100mA (Ta) Gate-Source Threshold Voltage: 2V @ 1μA Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 Ohm @ 10mA, 5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 102013-2SJ053600L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SMini3-G1 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100mA (Ta) Gate-Source Threshold Voltage: 2V @ 1μA Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 Ohm @ 10mA, 5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ053600L - 102013-2SJ053600L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ053600L
102013-2SJ053600L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ053600L 102013-2SJ053600L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 102013-2SJ053600L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SMini3-G1 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100mA (Ta) Gate-Source Threshold Voltage: 2V @ 1μA Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 Ohm @ 10mA, 5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 102013-2SJ053600L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SMini3-G1
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100mA (Ta)
Gate-Source Threshold Voltage: 2V @ 1μA
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 Ohm @ 10mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 2SJ053600LTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SJ053600LTR-ND
Single FETs, MOSFETs 2SJ053600LTR-ND
P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount SMini3-G1

P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount SMini3-G1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SJ053600L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SJ053600L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ053600L
MOSFET P-CH 30V 100MA SMINI3-G1

MOSFET P-CH 30V 100MA SMINI3-G1

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 102013-2SJ053600L 2SJ053600LTR-ND 2SJ053600L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ053600L Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 150 milliwatts
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