Panasonic TRANSISTORS - Transistors (BJT) - Single - 2SD21330RA 2SD21330RA

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 132231-2SD21330RA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MT-3-A1 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 400mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 500mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 132231-2SD21330RA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MT-3-A1 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 400mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 500mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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Suppliers

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Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SD21330RA - 132231-2SD21330RA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD21330RA
132231-2SD21330RA
TRANSISTORS - Transistors (BJT) - Single - 2SD21330RA 132231-2SD21330RA
Manufacturer: Panasonic Electronic Components Win Source Part Number: 132231-2SD21330RA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MT-3-A1 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 400mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 500mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 132231-2SD21330RA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: MT-3-A1
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 400mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 500mA, 10V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD21330RA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD21330RA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD21330RA
TRANS NPN 50V 1A MT-3

TRANS NPN 50V 1A MT-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 132231-2SD21330RA 2SD21330RA
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SD21330RA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
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