Panasonic Single Bipolar Transistors 2SD20640S

Description
Bipolar (BJT) Transistor NPN 120V 6A 20MHz 3W Through Hole TOP-3F-A1
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 120V 6A 20MHz 3W Through Hole TOP-3F-A1
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 2SD20640S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD20640S-ND
Single Bipolar Transistors 2SD20640S-ND
Bipolar (BJT) Transistor NPN 120V 6A 20MHz 3W Through Hole TOP-3F-A1

Bipolar (BJT) Transistor NPN 120V 6A 20MHz 3W Through Hole TOP-3F-A1

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD20640S - 762854-2SD20640S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD20640S
762854-2SD20640S
TRANSISTORS - Transistors (BJT) - Single - 2SD20640S 762854-2SD20640S
Manufacturer: Panasonic Electronic Components Win Source Part Number: 762854-2SD20640S Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TOP-3F Power - Max: 3W Transistor Type: NPN Frequency - Transition: 20MHz Part Status: Obsolete(EOL) Categories: Discrete Semiconductor Products Manufacturer Package: TOP-3F-A1 Current - Collector (Ic) (Maximum): 6A Voltage - Collector Emitter Breakdown (Maximum): 120V Vce Saturation (Maximum) @ Ib, Ic: 2V @ 400mA, 4A Current - Collector Cutoff (Maximum): 50μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 80 @ 1A, 5V Alternative Parts (Cross-Reference): 2SC5100; TIP33C; 2SD20640S; 2SD2064Q; Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 762854-2SD20640S
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TOP-3F
Power - Max: 3W
Transistor Type: NPN
Frequency - Transition: 20MHz
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Manufacturer Package: TOP-3F-A1
Current - Collector (Ic) (Maximum): 6A
Voltage - Collector Emitter Breakdown (Maximum): 120V
Vce Saturation (Maximum) @ Ib, Ic: 2V @ 400mA, 4A
Current - Collector Cutoff (Maximum): 50μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 80 @ 1A, 5V
Alternative Parts (Cross-Reference): 2SC5100; TIP33C; 2SD20640S; 2SD2064Q;
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD20640S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD20640S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD20640S
TRANS NPN 120V 6A TOP-3F

TRANS NPN 120V 6A TOP-3F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SD20640S-ND 762854-2SD20640S 2SD20640S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SD20640S Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
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