Panasonic 2SD1835T-AA

Description
NPN Epitaxial Planar Silicon Transistor
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Description
NPN Epitaxial Planar Silicon Transistor
Request a Quote
Datasheet
Datasheet Summary
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The 2SD1835T-AA is an NPN bipolar transistor in an NP package, rated for 50 V collector-to-emitter voltage and 2 A continuous collector current, with a collector dissipation of 0.75 W and a junction temperature limit of 150 °C. It features a low collector-to-emitter saturation voltage of 0.15 to 0.4 V at 1 A collector current and 50 mA base current, and a DC current gain (hFE) range of 280 to 560 for the T rank. The device has a gain-bandwidth product of 150 MHz and switching times of 60 ns turn-on, 550 ns storage, and 30 ns fall time. It meets JEDEC TO-92 and SOT-54 package standards and is supplied in 1,500-piece boxes. The part is Pb-free and RoHS compliant.

Datasheet Summary
Powered by GS/AI

The 2SD1835T-AA is an NPN bipolar transistor in an NP package, rated for 50 V collector-to-emitter voltage and 2 A continuous collector current, with a collector dissipation of 0.75 W and a junction temperature limit of 150 °C. It features a low collector-to-emitter saturation voltage of 0.15 to 0.4 V at 1 A collector current and 50 mA base current, and a DC current gain (hFE) range of 280 to 560 for the T rank. The device has a gain-bandwidth product of 150 MHz and switching times of 60 ns turn-on, 550 ns storage, and 30 ns fall time. It meets JEDEC TO-92 and SOT-54 package standards and is supplied in 1,500-piece boxes. The part is Pb-free and RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
 - 2SD1835T-AA - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Planar Silicon Transistor

NPN Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SD1835T-AA
Polarity NPN
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