Panasonic 2SD1816S-TL-E

Description
Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single
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Description
Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single
Request a Quote
Datasheet
Datasheet Summary
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NPN bipolar transistor for general high current switching applications, available in DPAK/TP-FA package measuring 6.7 mm x 6.7 mm with a 2.3 mm lead pitch. Rated for 100 V collector-emitter voltage, 4 A continuous collector current, and 150 °C junction temperature. Features low collector-emitter saturation voltage (400 mV max at IC = -2 A, IB = -0.2 A), high DC current gain (hFE 200-400 for rank T), and 180 MHz gain-bandwidth product. Meets RoHS and is halogen-free. Suitable for relay drivers, inverters, and converters.

Datasheet Summary
Powered by GS/AI

NPN bipolar transistor for general high current switching applications, available in DPAK/TP-FA package measuring 6.7 mm x 6.7 mm with a 2.3 mm lead pitch. Rated for 100 V collector-emitter voltage, 4 A continuous collector current, and 150 °C junction temperature. Features low collector-emitter saturation voltage (400 mV max at IC = -2 A, IB = -0.2 A), high DC current gain (hFE 200-400 for rank T), and 180 MHz gain-bandwidth product. Meets RoHS and is halogen-free. Suitable for relay drivers, inverters, and converters.

Suppliers

Company
Product
Description
Supplier Links
 - 2SD1816S-TL-E - Rochester Electronics
Newburyport, MA, United States
Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SD1816S-TL-E
Polarity NPN
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