Panasonic Single Bipolar Transistors 2SD1423A

Description
Bipolar (BJT) Transistor NPN 50V 500mA 200MHz 300mW Through Hole NS-B1
  • Single Bipolar Transistors - 2SD1423ATB-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2SD1423A - 119406-2SD1423A - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD1423A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 50V 500mA 200MHz 300mW Through Hole NS-B1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SD1423ATB-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD1423ATB-ND
Single Bipolar Transistors 2SD1423ATB-ND
Bipolar (BJT) Transistor NPN 50V 500mA 200MHz 300mW Through Hole NS-B1

Bipolar (BJT) Transistor NPN 50V 500mA 200MHz 300mW Through Hole NS-B1

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD1423A - 119406-2SD1423A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1423A
119406-2SD1423A
TRANSISTORS - Transistors (BJT) - Single - 2SD1423A 119406-2SD1423A
Manufacturer: Panasonic Electronic Components Win Source Part Number: 119406-2SD1423A Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: NS-B1 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 600mV @ 30mA, 300mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 85 @ 150mA, 10V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 119406-2SD1423A
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: NS-B1
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 600mV @ 30mA, 300mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 85 @ 150mA, 10V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD1423A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD1423A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD1423A
TRANS NPN 50V 0.5A NS-B1

TRANS NPN 50V 0.5A NS-B1

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SD1423ATB-ND 119406-2SD1423A 2SD1423A
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SD1423A Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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