Panasonic Single Bipolar Transistors 2SD1271AP

Description
Bipolar (BJT) Transistor NPN 100V 7A 30MHz 2W Through Hole TO-220F-A1
  • Single Bipolar Transistors - 2SD1271AP-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2SD1271AP - 136017-2SD1271AP - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD1271AP - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Bipolar (BJT) Transistor NPN 100V 7A 30MHz 2W Through Hole TO-220F-A1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SD1271AP-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD1271AP-ND
Single Bipolar Transistors 2SD1271AP-ND
Bipolar (BJT) Transistor NPN 100V 7A 30MHz 2W Through Hole TO-220F-A1

Bipolar (BJT) Transistor NPN 100V 7A 30MHz 2W Through Hole TO-220F-A1

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD1271AP - 136017-2SD1271AP - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1271AP
136017-2SD1271AP
TRANSISTORS - Transistors (BJT) - Single - 2SD1271AP 136017-2SD1271AP
Manufacturer: Panasonic Electronic Components Win Source Part Number: 136017-2SD1271AP Packaging: Bulk Mounting: Through Hole Frequency - Transition: 30MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F-A1 Maximum Current Collector: 7A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 500mV @ 250mA, 5A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 130 @ 3A, 2V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 136017-2SD1271AP
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 30MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F-A1
Maximum Current Collector: 7A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 500mV @ 250mA, 5A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 130 @ 3A, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD1271AP - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD1271AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD1271AP
TRANS NPN 100V 7A TO220F-A1

TRANS NPN 100V 7A TO220F-A1

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SD1271AP-ND 136017-2SD1271AP 2SD1271AP
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SD1271AP Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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