Panasonic 2SD1153

NPN epitaxial planar silicon Darlington transistor for driver applications, housed in a 2006B package measuring 6.0 mm × 5.0 mm with a 3-pin configuration. Features a collector-to-emitter voltage rating of 50 V, collector current of 1.5 A, and collector dissipation of 900 mW. DC current gain exceeds 3000 at 10 mA and 4000 at 500 mA. Saturation voltage is specified as 0.9 V to 1.5 V at 500 mA collector current. Junction temperature rating is 150 °C, with storage temperature from −55 °C to +150 °C. Meets no stated industry standards.