Panasonic 2SC5980-TL-E

Description
NPN Epitaxial Planar Silicon Transistor For High-Current Switching
  • 2SC5980-TL-E - Rochester Electronics
    Rochester Electronics
Request a Quote
Description
NPN Epitaxial Planar Silicon Transistor For High-Current Switching
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
- 2SC5980-TL-E - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
2SC5980-TL-E
2SC5980-TL-E
NPN Epitaxial Planar Silicon Transistor For High-Current Switching

NPN Epitaxial Planar Silicon Transistor For High-Current Switching

Supplier's Site

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SC5980-TL-E
Polarity NPN
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SC2612 - 906350-2SC2612 - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SC2612
2SC2612
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor - TGF2978-SM - Qorvo
Qorvo
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor
TGF2978-SM
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN
View Details
2 suppliers
Single FETs, MOSFETs - 448-AIMBG120R040M1XTMA1TR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMBG120R040M1XTMA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
2 suppliers