Panasonic 2SC4489T

NPN epitaxial planar silicon transistor for high-voltage switching applications, packaged in a 3-pin TO-92 style case measuring 6.9 mm in height and 5.4 mm in width. Maximum collector-to-emitter voltage is 100 V, collector current is 2 A, and power dissipation is 1 W. Junction temperature rating is 150°C. DC current gain (hFE) ranges from 200 to 400 at VCE = −5 V and IC = −100 mA. Gain-bandwidth product is 120 MHz at VCE = −10 V and IC = −100 mA. Turn-on time is 80 ns, storage time is 1000 ns, and fall time is 50 ns under specified test conditions. Collector-to-emitter saturation voltage is 0.4 V at IC = −1 A and IB = −100 mA. Base-to-emitter saturation voltage is −1.2 V under the same conditions. Output capacitance is 16 pF at VCB = −10 V and f = 1 MHz.