Panasonic 2SC4488T

Description
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
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Description
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
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Datasheet
Datasheet Summary
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NPN silicon transistor for high-voltage switching, housed in a TO-92 package measuring 5.4 mm body width and 6.9 mm length, with a collector-to-emitter voltage rating of 100 V, collector current of 1 A, and collector dissipation of 1 W. Features a DC current gain (hFE) range of 200 to 400 for the T-bin variant, a gain-bandwidth product of 120 MHz, and switching times of 80 ns turn-on, 850 ns storage, and 50 ns fall. Meets junction temperature rating of 150 °C and storage temperature range of -55 °C to +150 °C.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for high-voltage switching, housed in a TO-92 package measuring 5.4 mm body width and 6.9 mm length, with a collector-to-emitter voltage rating of 100 V, collector current of 1 A, and collector dissipation of 1 W. Features a DC current gain (hFE) range of 200 to 400 for the T-bin variant, a gain-bandwidth product of 120 MHz, and switching times of 80 ns turn-on, 850 ns storage, and 50 ns fall. Meets junction temperature rating of 150 °C and storage temperature range of -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC4488T - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC4488T
Polarity NPN
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