Panasonic 2SC4428M

NPN silicon transistor for switching regulator applications, housed in a TO-3PML package. It has a collector-to-emitter voltage rating of 800 V, a continuous collector current of 6 A, and a collector dissipation of 55 W at Tc=25°C. The junction temperature rating is 150°C, with a storage temperature range of -55°C to +150°C. Switching characteristics include a turn-on time of 0.5 µs, storage time of 3.0 µs, and fall time of 0.3 µs. The DC current gain (hFE) for the M rank is 20 to 40, with a gain-bandwidth product of 15 MHz. The device is constructed using the MBIT process.