Panasonic 2SC4002E

Description
Small Signal Bipolar Transistor
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Description
Small Signal Bipolar Transistor
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Datasheet
Datasheet Summary
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NPN silicon transistor for high-voltage driver applications, in a 3-pin package with dimensions of 6.0 mm length and 4.0 mm width, rated for a collector-to-base and collector-to-emitter voltage of 400 V, collector current of 200 mA, and power dissipation of 600 mW. It features a minimum DC current gain of 100 at IC=50mA and VCE=10V (E-rank), a gain-bandwidth product of 70 MHz, and switching times of 0.25 µs turn-on and 5.0 µs turn-off. Junction temperature range is from -55°C to +150°C.

Datasheet Summary
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NPN silicon transistor for high-voltage driver applications, in a 3-pin package with dimensions of 6.0 mm length and 4.0 mm width, rated for a collector-to-base and collector-to-emitter voltage of 400 V, collector current of 200 mA, and power dissipation of 600 mW. It features a minimum DC current gain of 100 at IC=50mA and VCE=10V (E-rank), a gain-bandwidth product of 70 MHz, and switching times of 0.25 µs turn-on and 5.0 µs turn-off. Junction temperature range is from -55°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC4002E - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor

Small Signal Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC4002E
Package Type TO-92; TO-92-3
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