Panasonic 2SC3953E-PM

Description
NPN Epitaxial Planar Silicon Transistor
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Description
NPN Epitaxial Planar Silicon Transistor
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Datasheet
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NPN epitaxial planar silicon transistor for high-definition CRT display video output applications, in a TO-126 plastic package. It has a collector-to-emitter voltage rating of 120 V, a collector current of 200 mA, and a gain-bandwidth product of 400 MHz. Reverse transfer capacitance is 1.7 pF at 30 V, and it features a complementary PNP counterpart (2SA1538). The device meets the FBET process technology standard and is micaless. The E suffix denotes a specific hFE classification range of 100 to 200 at 10 mA collector current.

Datasheet Summary
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NPN epitaxial planar silicon transistor for high-definition CRT display video output applications, in a TO-126 plastic package. It has a collector-to-emitter voltage rating of 120 V, a collector current of 200 mA, and a gain-bandwidth product of 400 MHz. Reverse transfer capacitance is 1.7 pF at 30 V, and it features a complementary PNP counterpart (2SA1538). The device meets the FBET process technology standard and is micaless. The E suffix denotes a specific hFE classification range of 100 to 200 at 10 mA collector current.

Suppliers

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Product
Description
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 - 2SC3953E-PM - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Planar Silicon Transistor

NPN Epitaxial Planar Silicon Transistor

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Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SC3953E-PM
Polarity NPN
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