Panasonic 2SC3776D

Description
NPN Epitaxial Planar Silicon Transistor
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Description
NPN Epitaxial Planar Silicon Transistor
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Datasheet
Datasheet Summary
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NPN epitaxial planar silicon transistor for UHF oscillator, mixer, and low-noise amplifier applications, in a 3-pin package with dimensions of 6.0 mm × 5.0 mm × 1.3 mm. Features a typical noise figure of 2.5 dB and a maximum available power gain of 12 dB at 0.9 GHz, with a cutoff frequency of 3.0 GHz. Maximum ratings include a collector-to-emitter voltage of 16 V, collector current of 70 mA, and power dissipation of 400 mW. The device operates with a junction temperature up to 150°C and storage temperature range from -55°C to +150°C.

Datasheet Summary
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NPN epitaxial planar silicon transistor for UHF oscillator, mixer, and low-noise amplifier applications, in a 3-pin package with dimensions of 6.0 mm × 5.0 mm × 1.3 mm. Features a typical noise figure of 2.5 dB and a maximum available power gain of 12 dB at 0.9 GHz, with a cutoff frequency of 3.0 GHz. Maximum ratings include a collector-to-emitter voltage of 16 V, collector current of 70 mA, and power dissipation of 400 mW. The device operates with a junction temperature up to 150°C and storage temperature range from -55°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC3776D - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Planar Silicon Transistor

NPN Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SC3776D
Polarity NPN
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