NPN epitaxial planar silicon transistor for ultrahigh-definition CRT video output and color TV chroma applications, in a TO-126 package measuring 8.0 mm × 5.1 mm × 4.8 mm. Features a collector-to-emitter breakdown voltage of 200 V, collector current rating of 100 mA, and a typical gain-bandwidth product of 400 MHz. Reverse transfer capacitance is 1.4 pF. Complementary to the 2SA1406 PNP transistor. Classified under hFE range 60 to 120 for the D grade. Operates with junction temperature up to 150 °C. Manufactured using FBET process.
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NPN epitaxial planar silicon transistor for ultrahigh-definition CRT video output and color TV chroma applications, in a TO-126 package measuring 8.0 mm × 5.1 mm × 4.8 mm. Features a collector-to-emitter breakdown voltage of 200 V, collector current rating of 100 mA, and a typical gain-bandwidth product of 400 MHz. Reverse transfer capacitance is 1.4 pF. Complementary to the 2SA1406 PNP transistor. Classified under hFE range 60 to 120 for the D grade. Operates with junction temperature up to 150 °C. Manufactured using FBET process.
