Panasonic Single Bipolar Transistors 2SC3311ARA

Description
Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 300mW Through Hole NS-B1
  • Single Bipolar Transistors - 2SC3311ARATB-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2SC3311ARA - 1004368-2SC3311ARA - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3311ARA - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 300mW Through Hole NS-B1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SC3311ARATB-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC3311ARATB-ND
Single Bipolar Transistors 2SC3311ARATB-ND
Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 300mW Through Hole NS-B1

Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 300mW Through Hole NS-B1

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SC3311ARA - 1004368-2SC3311ARA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC3311ARA
1004368-2SC3311ARA
TRANSISTORS - Transistors (BJT) - Single - 2SC3311ARA 1004368-2SC3311ARA
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004368-2SC3311ARA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 150MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: NS-B1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 210 @ 2mA, 10V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1004368-2SC3311ARA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 150MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: NS-B1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 10mA, 100mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 210 @ 2mA, 10V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3311ARA - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC3311ARA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC3311ARA
TRANS NPN 50V 0.1A NS-B1

TRANS NPN 50V 0.1A NS-B1

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SC3311ARATB-ND 1004368-2SC3311ARA 2SC3311ARA
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SC3311ARA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
Unlock Full Specs
to access all available technical data