Panasonic Single Bipolar Transistors 2SC3311A0A

Description
Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 300mW Through Hole NS-B1
  • Single Bipolar Transistors - 2SC3311A0ATB-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2SC3311A0A - 1004366-2SC3311A0A - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3311A0A - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 300mW Through Hole NS-B1
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - 2SC3311A0ATB-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC3311A0ATB-ND
Single Bipolar Transistors 2SC3311A0ATB-ND
Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 300mW Through Hole NS-B1

Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 300mW Through Hole NS-B1

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SC3311A0A - 1004366-2SC3311A0A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC3311A0A
1004366-2SC3311A0A
TRANSISTORS - Transistors (BJT) - Single - 2SC3311A0A 1004366-2SC3311A0A
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004366-2SC3311A0A Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 150MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: NS-B1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 160 @ 2mA, 10V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1004366-2SC3311A0A
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 150MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: NS-B1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 10mA, 100mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 160 @ 2mA, 10V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3311A0A - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC3311A0A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC3311A0A
TRANS NPN 50V 0.1A NS-B1

TRANS NPN 50V 0.1A NS-B1

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SC3311A0ATB-ND 1004366-2SC3311A0A 2SC3311A0A
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SC3311A0A Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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