NPN triple diffused planar silicon transistor in TO-220AB package for switching regulator applications, rated for 800 V collector-to-emitter voltage and 3 A continuous collector current, with a maximum collector dissipation of 50 W at Tc=25°C and a junction temperature range up to 150°C. Features include a collector-to-base breakdown voltage of 900 V, switching times of 1.0 µs turn-on and 0.7 µs fall time, and a current gain (hFE) range of 10 to 40 at VCE=5 V and IC=0.2 A. Meets JEDEC TO-220AB and EIAJ SC-46 package standards.
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NPN triple diffused planar silicon transistor in TO-220AB package for switching regulator applications, rated for 800 V collector-to-emitter voltage and 3 A continuous collector current, with a maximum collector dissipation of 50 W at Tc=25°C and a junction temperature range up to 150°C. Features include a collector-to-base breakdown voltage of 900 V, switching times of 1.0 µs turn-on and 0.7 µs fall time, and a current gain (hFE) range of 10 to 40 at VCE=5 V and IC=0.2 A. Meets JEDEC TO-220AB and EIAJ SC-46 package standards.
