Panasonic 2SC3142-3-TB-E

NPN epitaxial planar silicon transistor for high-frequency general-purpose amplifier applications, in a compact package with dimensions 5.0 × 5.1 × 1.9 mm. Features a collector-to-base voltage rating of 25 V, collector-to-emitter voltage of 20 V, and maximum collector current of 30 mA. Power dissipation is 150 mW with a junction temperature limit of 125°C. Gain-bandwidth product is 750 MHz typical, feedback capacitance is 0.6 pF typical, and noise figure is 2.2 dB at 100 MHz. HFE is classified in ranks with the -3 variant covering 60 to 120. Complies with RoHS. Applications exclude high-reliability systems such as life-support or aircraft controls.