Panasonic 2SC3114S

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Datasheet
Datasheet Summary
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NPN silicon transistor for high-voltage audio frequency amplifier applications, in a TO-92 package with dimensions of 5.0 mm height, 4.0 mm body width, and 1.3 mm lead spacing. Features a collector-to-emitter voltage rating of 50 V, collector current of 150 mA, collector dissipation of 400 mW, and a junction temperature limit of 150 °C. Has a minimum DC current gain (hFE) of 140 at 1 mA collector current, and a gain-bandwidth product of 100 MHz. The part meets no listed industry standards or qualifications.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for high-voltage audio frequency amplifier applications, in a TO-92 package with dimensions of 5.0 mm height, 4.0 mm body width, and 1.3 mm lead spacing. Features a collector-to-emitter voltage rating of 50 V, collector current of 150 mA, collector dissipation of 400 mW, and a junction temperature limit of 150 °C. Has a minimum DC current gain (hFE) of 140 at 1 mA collector current, and a gain-bandwidth product of 100 MHz. The part meets no listed industry standards or qualifications.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC3114S - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC3114S
Polarity NPN
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