Panasonic Single Bipolar Transistors 2SC14730RA

Description
Bipolar (BJT) Transistor NPN 200V 70mA 80MHz 750mW Through Hole TO-92-B1
  • Single Bipolar Transistors - 2SC14730RATB-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2SC14730RA - 1004327-2SC14730RA - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC14730RA - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 200V 70mA 80MHz 750mW Through Hole TO-92-B1
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - 2SC14730RATB-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC14730RATB-ND
Single Bipolar Transistors 2SC14730RATB-ND
Bipolar (BJT) Transistor NPN 200V 70mA 80MHz 750mW Through Hole TO-92-B1

Bipolar (BJT) Transistor NPN 200V 70mA 80MHz 750mW Through Hole TO-92-B1

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SC14730RA - 1004327-2SC14730RA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC14730RA
1004327-2SC14730RA
TRANSISTORS - Transistors (BJT) - Single - 2SC14730RA 1004327-2SC14730RA
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004327-2SC14730RA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 80MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92B-B1 Maximum Current Collector: 70mA VCEO Maximum Collector-Emitter Breakdown Voltage: 200V Max Vce (sat): 1.2V @ 5mA, 50mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 100 @ 5mA, 10V Maximum Power Dissipation: 750mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1004327-2SC14730RA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 80MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92B-B1
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 200V
Max Vce (sat): 1.2V @ 5mA, 50mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 100 @ 5mA, 10V
Maximum Power Dissipation: 750mW
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC14730RA - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC14730RA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC14730RA
TRANS NPN 200V 0.07A TO92-B1

TRANS NPN 200V 0.07A TO92-B1

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SC14730RATB-ND 1004327-2SC14730RA 2SC14730RA
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SC14730RA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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