Panasonic 2SB926T

Description
PNP Epitaxial Planar Silicon Transistor
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Description
PNP Epitaxial Planar Silicon Transistor
Request a Quote
Datasheet
Datasheet Summary
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PNP Epitaxial Planar Silicon Transistor for large-current driving applications, including power supplies, relay drivers, and lamp drivers, in a TO-92 package with dimensions of 6.0 mm in length, 5.0 mm in width, and 4.0 mm in thickness. It has a collector-to-emitter voltage rating of 25 V, a collector current rating of 2 A, a collector dissipation of 0.75 W, and a junction temperature rating of 150 °C. The device exhibits a DC current gain (hFE) range of 100 to 560 at 100 mA collector current, a collector-to-emitter saturation voltage of 0.18 V to 0.6 V at 1.5 A collector current and 75 mA base current, and a gain-bandwidth product of 150 MHz. The part is classified in the T rank with hFE between 200 and 400 at 100 mA.

Datasheet Summary
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PNP Epitaxial Planar Silicon Transistor for large-current driving applications, including power supplies, relay drivers, and lamp drivers, in a TO-92 package with dimensions of 6.0 mm in length, 5.0 mm in width, and 4.0 mm in thickness. It has a collector-to-emitter voltage rating of 25 V, a collector current rating of 2 A, a collector dissipation of 0.75 W, and a junction temperature rating of 150 °C. The device exhibits a DC current gain (hFE) range of 100 to 560 at 100 mA collector current, a collector-to-emitter saturation voltage of 0.18 V to 0.6 V at 1.5 A collector current and 75 mA base current, and a gain-bandwidth product of 150 MHz. The part is classified in the T rank with hFE between 200 and 400 at 100 mA.

Suppliers

Company
Product
Description
Supplier Links
 - 2SB926T - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor

PNP Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SB926T
Polarity PNP
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